The 71st IEEE International Electron Devices Meeting (IEDM), scheduled for December 6-10, 2025, in San Francisco, is poised to be a landmark event in the microelectronics and semiconductor arena. Celebrating the centennial milestone of the field-effect transistor (FET), the conference will dive into the transformative legacy and future directions of FET technology under the banner “100 Years of FETs: Shaping the Future of Device Innovations.” This grand gathering attracts innovators, researchers, and industry professionals, presenting a prime platform to both honor a century of electronic device breakthroughs and envision the next wave of advancements.
For over seven decades, IEDM has cemented its reputation as a premier forum dedicated to unearthing and disseminating cutting-edge advances in semiconductor technologies. This venerable meeting traverses a broad spectrum, from the physics and modeling of devices to design, manufacturing, and system-level integration. In 2025, the call for papers explicitly encourages the semiconductor community to contribute original research that pushes the envelope across all microelectronics disciplines. The conference’s commitment to knowledge exchange is evident in its structure—highlighting special focus sessions, workshops, and forums that foster spirited engagement among academic researchers, industry titans, and governmental stakeholders alike.
At its core, IEDM 2025 spotlights the field-effect transistor—a device that, over a hundred years, revolutionized electronics by enabling scalable architectures boasting efficiency and performance levels foundational to modern digital computing and communication infrastructures. Reflecting on this milestone ignites inspiration for novel explorations into alternative materials, innovative device architectures, and unconventional concepts that promise to transcend current limitations. Efforts on energy efficiency, switching speeds, miniaturization, and system integration complexity form the frontier inquiries shaping this era, with FET technology’s legacy serving as their vital reference point.
The conference’s expansive call for papers further underscores the multifaceted nature of microelectronics research today. Deliberations span advanced transistor technologies that chart new operational regimes to neuromorphic and quantum computing devices poised to redefine computational paradigms. This also encompasses high-frequency and radio frequency applications—critical to emerging 5G and millimeter-wave systems—alongside explorations of emerging memory technologies and beyond-charge-based devices that challenge traditional electronic design approaches. Crucially, manufacturing and reliability are not mere afterthoughts but integral pillars within the dialogue, covering modeling, fabrication techniques, heterogeneous integration strategies, and system-level packaging. These areas foster an interdisciplinary confluence of physics, materials science, circuit design, and engineering—fueling progress in device science that is both holistic and application-driven.
To complement this technical breadth, IEDM 2025 promotes active engagement through interactive formats such as structured technical sessions and workshops, which encourage dialogue across academia, industry, and government agencies. This environment accelerates the translation of laboratory breakthroughs into tangible commercial technologies and shapes forthcoming product roadmaps in computing, communication, and sensing domains. Moreover, the conference recognizes the vital role of emerging talent by nurturing student participation and supporting early-career scientists through dedicated programs, ensuring a robust pipeline of future leaders who will carry electron device research into uncharted territories.
Looking ahead, the significance of IEDM 2025 extends beyond mere commemoration; it represents a convergence point where historical achievement meets futuristic innovation. The centenary of FET technology serves not only as a moment of reflection on a transformative journey but also as a clarion call for continued bold inquiry into electron device physics and applications. Submissions due by July 10, 2025, with a late-news deadline on August 18, enable the conference to showcase the very latest developments and rapidly disseminate findings through IEEE Xplore and official proceedings. This ensures IEDM remains a catalyst in driving semiconductor technology forward, especially in critical areas such as intelligent systems, quantum applications, and next-generation computing architectures.
All told, the 71st IEEE International Electron Devices Meeting stands as a pivotal milestone within the global microelectronics community. By bringing together leading minds to celebrate a hundred years of impactful FET technology while fostering innovative research across a broad technical range, it solidifies its standing as a vital platform advancing electron device science. Commemorating past milestones and galvanizing future breakthroughs, IEDM 2025 embodies the ongoing evolution of semiconductor technology, constantly reshaping the trajectory of electronic device innovation worldwide. The event is not only a homage to the legacy of the field-effect transistor but a decisive step forward in charting the next era of discoveries that will underpin tomorrow’s computational and communicative infrastructure.
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